Abstract

The transition toward sustainable microelectronics is propelled by the need to reduce environmental footprint, minimize reliance on scarce or toxic elements, and ensure compatibility with established semiconductor manufacturing. Improving device efficiency and enabling material circularity are central to this transformation. Physical Vapor Deposition (PVD) represents an intrinsically eco-friendly thin-film synthesis method, offering low waste generation, the absence of hazardous chemical precursors, and safe, dry-process operation compared to conventional wet chemistry (MOCVD, MOVPE, ALD etc). 

Metal nitride thin films stand at the forefront of this movement due to their exceptional functional diversity and process versatility. They include metallic compounds such as TiN, superconducting NbN, semiconducting GaN and AlN, and advanced ferro- and piezoelectric such as AlScN, GaScN, AlBN. PVD techniquesm - including magnetron sputtering - enable precise, non-equilibrium control over stoichiometry, crystallinity, and nanoscale morphology, parameters that directly determine the electrical, mechanical, and piezoelectric properties of these materials. By advancing the understanding and application of these sustainable material systems, we aim to accelerate the development of high-efficiency, environmentally responsible semiconductors for next-generation sensing, resonator, and power electronic technologies. 

This symposium invites contributions on the synthesis, advanced characterization, and device integration of PVD-grown metal nitrides, including materials being developed under the umbrella of the "Wide Bandgap (WBG) Pilot Line." This colloquium will bring leading scientists and engineers together to discuss the critical challenges and the path toward achieving sustainable semiconductor materials manufacturing.

Invited speakers

to be announced

Organizers